Atomic-Scale Mechanism of Enhanced Electron–Phonon Coupling at the Interface of MgB2 Thin Films

• Published in: Nano letters Vol. 24; no. 42; pp. 13200 - 13205
• Main Authors: Zhang, Xiaowen, Xu, Tiequan, Shi, Ruochen, Han, Bo, Liu, Fachen, Liu, Zhetong, Gao, Xiaoyue, Du, Jinlong, Wang, Yue, Gao, Peng
• Format: Journal Article
• Language: English
• Published: American Chemical Society 23.10.2024
• Subjects: electron−phonon coupling; interfacial phonon; STEM-EELS; interface effect
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/acs.nanolett.4c03170

In conventional Bardeen–Cooper–Schrieffer (BCS) superconductors, electron–phonon coupling is the fundamental mechanism of superconductivity. For instance, the superconductivity of magnesium diboride (MgB2) comes from the coupling between E 2g modes (in-plane boron–boron bond vibrations) and self-doped charge carriers. In thin films and ceramics of BCS superconductors, interfaces with discontinuous chemical bonds may alter the local electron–phonon coupling. However, such effects remain largely unexplored. Here, we investigate the heterointerface of the MgB2 film on the SiC substrate at the atomic scale using electron microscopy and spectroscopy. We detect the presence of a thin MgO layer with a thickness of ∼1 nm between MgB2 and SiC. Atomic-level electron energy loss spectra (EELS) show MgB2-E 2g mode splitting and softening near the MgB2/MgO interface, which enhances electron–phonon coupling at the interface. Our findings highlight the potential of interface engineering to enhance superconductivity via modulating local phonon states and/or electron states.