Revealing Fast Negative Capacitance in PbZr0.2Ti0.8O3 Thin Film with Acicular Ferroelastic Domains

• Published in: Nano letters Vol. 24; no. 40; pp. 12426 - 12432
• Main Authors: He, Jiayi, Chen, Qianxin, Wu, Yiwei, Tan, Congbing, Zhong, Xiangli, Song, Hongjia, Ma, Ming, Li, Yunlong, Ouyang, Xiaoping, Wang, Jinbin, Zhong, Gaokuo
• Format: Journal Article
• Language: English
• Published: American Chemical Society 09.10.2024
• Subjects: acicular domain; negative capacitance; ferroelectric domain; ferroelectric thin films; PbZr0.2Ti0.8O3
• ISSN: 1530-6984; 1530-6992; 1530-6992
• DOI: 10.1021/acs.nanolett.4c02961

Negative capacitance effects with fast response times hold great potential for reducing the power consumption in high-frequency nanoelectronics. Nevertheless, the negative capacitance effect faces considerable complexity arising from the dynamic interplay among electrostatic, nucleation energies, and domain evolution. This intricate balance poses a formidable challenge to achieving fast negative capacitance. Herein, we have achieved a fast negative capacitance time of ∼16.23 ns in PbZr0.2Ti0.8O3 (PZT) thin film, and our investigation confirms the presence of acicular ferroelastic domains within the PZT thin film. Under reversal electric fields, these acicular ferroelastic domains undergo a unique flipping process, transitioning through domain expansion and contraction. This distinct domain flipping manner accelerates the nucleation and growth of ferroelectric domains, thereby facilitating the observed fast negative capacitance. The realization of fast negative capacitance holds substantial promise for reducing operational time and power consumption, offering prospects for the design of nanoelectronics with significantly lower power requirements.