Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1–x In x )2Se3 Nanodevices
We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi1–x In x )2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a −3%:–1%...
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Published in | ACS nano Vol. 12; no. 2; pp. 1537 - 1543 |
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Main Authors | , , , , , , , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
American Chemical Society
27.02.2018
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Subjects | |
Online Access | Get full text |
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Summary: | We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi1–x In x )2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a −3%:–1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1936-0851 1936-086X |
DOI: | 10.1021/acsnano.7b08054 |