From Heterolytic to Homolytic H2 Dissociation on Nanostructured MgO(001) Films As a Function of the Metal Support

• Published in: Journal of physical chemistry. C Vol. 117; no. 20; pp. 10623 - 10629
• Main Authors: Chen, Hsin-Yi Tiffany, Giordano, Livia, Pacchioni, Gianfranco
• Format: Journal Article
• Language: English
• Published: Columbus, OH American Chemical Society 23.05.2013
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electron states; Exact sciences and technology; Fermi surface: calculations and measurements; effective mass, g factor; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Methods of electronic structure calculations; Nanocrystalline materials; Physics; Radiation effects on specific materials; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Ultrathin films; Radiation effects; Atomic layer method; Work functions; Tunnel effect; Electron transfer; Hydrides; Nanostructures; Thin films; Interfaces; Nanometer scale; Electronic structure; Adsorption; Fermi level; Density functional method
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/jp4037588

It is well-known that the H2 molecule dissociates heterolytically on stepped MgO surfaces with formation of protons bound to O2– anions (OH groups) and hydride ions bound to Mg cations (MgH groups). Homolytic splitting, with formation of a pair of OH groups per adsorbed H2 molecule, is only possible in special conditions, like for polar MgO(111) surfaces or under irradiation due to the generation of O– radicals. In this work, we demonstrate, based on first-principles DFT calculations, that homolytic splitting of H2 is the thermodynamically most favored dissociation mode if MgO(001) films of a few atomic layers are deposited on a metal support. The choice of the support is crucial. In fact, on MgO/Ag(001) ultrathin films, H2 dissociation resembles the behavior of the bare MgO surface, while on MgO/Au(001), homolytic dissociation is preferred. The reason lies in the different position of the Fermi level in the two metal/oxide interfaces. The lower Fermi level (higher work function) of MgO/Au(001) favors the transfer of the H2 electrons to the metal support via electron tunneling through the ultrathin insulating layer (adsorption of protons). This is another manifestation of the unusual behavior of oxides at the nanoscale. It is of general relevance for the splitting and reactivity of covalently bound molecules.