SiC Power Module Design Performance, robustness and reliability

• Main Authors: Castellazzi, Alberto, Irace, Andrea
• Format: eBook Book
• Language: English
• Published: Stevenage The Institution of Engineering and Technology 2022; Institution of Engineering and Technology (The IET); Institution of Engineering and Technology; Institution of Engineering & Technology
• Edition: 1
• Series: Energy Engineering
• Subjects: Electrical; Electronic Devices; Electronics & Semiconductors; Power generation & distribution; Power Resources; Silicon carbide; TECHNOLOGY & ENGINEERING; Wide gap semiconductors
• ISBN: 9781785619076; 1785619071
• DOI: 10.1049/PBPO151E

High-frequency switching power semiconductor devices are at the heart of power electronic converters. To date, these devices have been dominated by the well-established silicon (Si) technology. However, their intrinsic physical limits are becoming a barrier to achieving higher performance power conversion. Wide Bandgap (WBG) semiconductor devices offer the potential for higher efficiency, smaller size, lighter weight, and/or longer lifetime. Applications in power grid electronics as well as in electromobility are on the rise, but a number of technological bottle-necks need to be overcome if applications are to become more widespread - particularly packaging. This book describes the development of advanced multi-chip packaging solutions for novel WBG semiconductors, specifically silicon carbide (SiC) power MOSFETs. Coverage includes an introduction; multi-chip power modules; module design and transfer to SiC technology; electrothermal, thermo-mechanical, statistical and electromagnetic aspects of optimum module design; high temperature capable SiC power modules; validation technologies; degradation monitoring; and emerging packaging technologies. The book is a valuable reference for researchers and experts in academia and industry.