刘国友, 罗海辉, 李诚瞻, & 宋瓘. (2021). 3300V SiC SBD嵌入式MOSFET研制. 中国电力, 54(12), 81-93. https://doi.org/10.11930/j.issn.1004-9649.202107055
Chicago Style (17th ed.) Citation刘国友, 罗海辉, 李诚瞻, and 宋瓘. "3300V SiC SBD嵌入式MOSFET研制." 中国电力 54, no. 12 (2021): 81-93. https://doi.org/10.11930/j.issn.1004-9649.202107055.
MLA (9th ed.) Citation刘国友, et al. "3300V SiC SBD嵌入式MOSFET研制." 中国电力, vol. 54, no. 12, 2021, pp. 81-93, https://doi.org/10.11930/j.issn.1004-9649.202107055.
Warning: These citations may not always be 100% accurate.