InP基共振隧穿二极管太赫兹振荡器的设计与实现

O43; 利用InP基共振隧穿二极管(RTD)和加载硅透镜的片上天线设计实现了超过1 THz的振荡器.采用Silvaco软件对RTD模型进行仿真研究,分析了不同发射区掺杂浓度、势垒层厚度、隔离层厚度以及势阱层厚度等对器件直流特性的影响规律.对研制的RTD器件直流特性测试显示:峰值电流密度Jp为359.2 kA/cm2,谷值电流密度Jv为135.8 kA/cm2,峰谷电流比PVCR为2.64,理论计算得到的器件最大射频输出功率和振荡频率(fmax)分别为1.71 mW和1.49 THz.利用透镜封装的形式对采用Bow-tie片上天线和RTD设计的太赫兹振荡器进行封装,测试得到振荡频率超过1 TH...

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Published in红外与毫米波学报 Vol. 41; no. 2; pp. 443 - 447
Main Authors 刘军, 宋瑞良, 刘宁, 梁士雄
Format Journal Article
LanguageChinese
Published 中国电子科技集团公司第五十四研究所北京研发中心,北京 100070%河北半导体技术研究所专用集成电路国家重点实验室,河北石家庄 050051 2022
Subjects
振荡器
oscillator
共振隧穿二极管
resonant tunneling diode
THz
太赫兹
Online AccessGet full text
ISSN1001-9014
DOI10.11972/j.issn.1001-9014.2022.02.010

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Abstract O43; 利用InP基共振隧穿二极管(RTD)和加载硅透镜的片上天线设计实现了超过1 THz的振荡器.采用Silvaco软件对RTD模型进行仿真研究,分析了不同发射区掺杂浓度、势垒层厚度、隔离层厚度以及势阱层厚度等对器件直流特性的影响规律.对研制的RTD器件直流特性测试显示:峰值电流密度Jp为359.2 kA/cm2,谷值电流密度Jv为135.8 kA/cm2,峰谷电流比PVCR为2.64,理论计算得到的器件最大射频输出功率和振荡频率(fmax)分别为1.71 mW和1.49 THz.利用透镜封装的形式对采用Bow-tie片上天线和RTD设计的太赫兹振荡器进行封装,测试得到振荡频率超过1 THz,输出功率为2.57μW,直流功耗为8.33 mW,是国内首次报道超过1 THz的振荡器.
AbstractList O43; 利用InP基共振隧穿二极管(RTD)和加载硅透镜的片上天线设计实现了超过1 THz的振荡器.采用Silvaco软件对RTD模型进行仿真研究,分析了不同发射区掺杂浓度、势垒层厚度、隔离层厚度以及势阱层厚度等对器件直流特性的影响规律.对研制的RTD器件直流特性测试显示:峰值电流密度Jp为359.2 kA/cm2,谷值电流密度Jv为135.8 kA/cm2,峰谷电流比PVCR为2.64,理论计算得到的器件最大射频输出功率和振荡频率(fmax)分别为1.71 mW和1.49 THz.利用透镜封装的形式对采用Bow-tie片上天线和RTD设计的太赫兹振荡器进行封装,测试得到振荡频率超过1 THz,输出功率为2.57μW,直流功耗为8.33 mW,是国内首次报道超过1 THz的振荡器.
Abstract_FL An oscillator above 1 THz is designed and realized using InP-based resonant tunneling diode(RTD) and an on-chip antenna with Si-lens. The RTD model was built and studied with Silvaco software. The influences of the doping concentration of emitter,the thickness of barrier layer,space layer,and well layer on the DC char?acteristics of the device have been analyzed. The DC measurement of the RTD shows the peak current density Jp=359. 2 kA/cm2,the valley current density Jv = 135. 8 kA/cm2,and the peak-to-valley current ratio(PVCR)=2. 64. According to the measurement,the maximum RF output power and oscillation frequency(fmax)are theoreti?cally calculated,which are 1. 71 mW and 1. 49 THz,respectively. The oscillator with an on-chip bow-tie antenna and RTD is packaged with Si-lens. The measurement shows the output power is 2. 57 μW at an operation frequen?cy of above 1 THz,the DC power consumption is 8. 33 mW. This is the first reported oscillator of frequency above 1 THz in domestic.
Author 刘宁
刘军
梁士雄
宋瑞良
AuthorAffiliation 中国电子科技集团公司第五十四研究所北京研发中心,北京 100070%河北半导体技术研究所专用集成电路国家重点实验室,河北石家庄 050051
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Author_FL LIU Jun
LIANG Shi-Xiong
LIU Ning
SONG Rui-Liang
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DocumentTitle_FL Design and realization of InP-based resonant tunneling diode THz oscillator
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Keywords 振荡器
oscillator
共振隧穿二极管
resonant tunneling diode
THz
太赫兹
Language Chinese
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PublicationTitle 红外与毫米波学报
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Publisher 中国电子科技集团公司第五十四研究所北京研发中心,北京 100070%河北半导体技术研究所专用集成电路国家重点实验室,河北石家庄 050051
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Snippet O43; 利用InP基共振隧穿二极管(RTD)和加载硅透镜的片上天线设计实现了超过1 THz的振荡器.采用Silvaco软件对RTD模型进行仿真研究,分析了不同发射区掺杂浓度、势垒层厚度、隔离层厚度以及势阱层厚度等对器件直流特性的影响规律.对研制的RTD器件直流特性测试显示:峰值电流密度Jp为359.2...
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StartPage 443
Title InP基共振隧穿二极管太赫兹振荡器的设计与实现
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Volume 41
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