Circuit with high-density capacitors using bootstrapped non-metal layer
A switched-capacitor circuit on a semiconductor device may include accurately matched, high-density metal-to-metal capacitors, using top-plate-to-bottom-plate fringe-capacitance for obtaining the desired capacitance values. A polysilicon plate may be inserted below the bottom metal layer, and bootst...
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Main Author | |
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Format | Patent |
Language | English |
Published |
30.10.2012
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Online Access | Get full text |
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