Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers

• Main Authors: Hempel, Klaus, Press, Patrick, Schroeder, Vivien, Reimer, Berthold, Groschopf, Johannes
• Format: Patent
• Language: English
• Published: 21.08.2012

In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged port...