Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers
In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a modified portion in the interlayer dielectric material by ion implantation. Consequently, the damaged port...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English |
Published |
21.08.2012
|
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!