Trench-gate LDMOS structures

• Main Authors: Wilson, Peter H, Sapp, Steven
• Format: Patent
• Language: English
• Published: 12.06.2012

MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in...