Trench-gate LDMOS structures
MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in...
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Format | Patent |
Language | English |
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12.06.2012
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Abstract | MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias. |
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AbstractList | MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias. |
Author | Wilson, Peter H Sapp, Steven |
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ContentType | Patent |
CorporateAuthor | Fairchild Semiconductor Corporation |
CorporateAuthor_xml | – name: Fairchild Semiconductor Corporation |
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PublicationCentury | 2000 |
PublicationDate | 20120612 |
PublicationDateYYYYMMDD | 2012-06-12 |
PublicationDate_xml | – month: 06 year: 2012 text: 20120612 day: 12 |
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PublicationYear | 2012 |
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Score | 2.8452883 |
Snippet | MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides... |
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Title | Trench-gate LDMOS structures |
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