High frequency power amplifier and operating method thereof

A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect transistor is provided. The high-frequency power amplifier comprises, over a semiconductor chip, a bias control circuit, a bias transistor and an amp...

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Main Authors Ohta, Ikuma, Hayashi, Norio, Tsutsui, Takayuki, Morisawa, Fuminori, Hase, Masatoshi
Format Patent
LanguageEnglish
Published 22.05.2012
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Abstract A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect transistor is provided. The high-frequency power amplifier comprises, over a semiconductor chip, a bias control circuit, a bias transistor and an amplification transistor which are coupled so as to configure a current mirror circuit, and a gate length monitor circuit comprising a replicating transistor. The amplification transistor amplifies an RF signal and a bias current of the bias control circuit is supplied to the bias transistor. The transistors are fabricated by the same semiconductor manufacturing process, and have the same variation of gate length. The gate length monitor circuit generates a detection voltage depending on the gate length. According to the detection voltage, the bias control circuit controls the bias current, thereby compensating the gate length dependence of transconductance of the amplification transistor.
AbstractList A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect transistor is provided. The high-frequency power amplifier comprises, over a semiconductor chip, a bias control circuit, a bias transistor and an amplification transistor which are coupled so as to configure a current mirror circuit, and a gate length monitor circuit comprising a replicating transistor. The amplification transistor amplifies an RF signal and a bias current of the bias control circuit is supplied to the bias transistor. The transistors are fabricated by the same semiconductor manufacturing process, and have the same variation of gate length. The gate length monitor circuit generates a detection voltage depending on the gate length. According to the detection voltage, the bias control circuit controls the bias current, thereby compensating the gate length dependence of transconductance of the amplification transistor.
Author Hayashi, Norio
Hase, Masatoshi
Morisawa, Fuminori
Ohta, Ikuma
Tsutsui, Takayuki
Author_xml – sequence: 1
  givenname: Ikuma
  surname: Ohta
  fullname: Ohta, Ikuma
– sequence: 2
  givenname: Norio
  surname: Hayashi
  fullname: Hayashi, Norio
– sequence: 3
  givenname: Takayuki
  surname: Tsutsui
  fullname: Tsutsui, Takayuki
– sequence: 4
  givenname: Fuminori
  surname: Morisawa
  fullname: Morisawa, Fuminori
– sequence: 5
  givenname: Masatoshi
  surname: Hase
  fullname: Hase, Masatoshi
BookMark eNrjYmDJy89L5WSw9shMz1BIK0otLE3NS65UKMgvTy1SSMwtyMlMywSx8lIU8gtSixJLMvPSFXJTSzLyUxRKMlKLUvPTeBhY0xJzilN5oTQ3g4Kba4izh25pcUFiSWpeSXF8elEiiDKwMLQwtjQyNSZCCQCdQjJY
ContentType Patent
CorporateAuthor Renesas Electronics Corporation
CorporateAuthor_xml – name: Renesas Electronics Corporation
DBID EFH
DatabaseName USPTO Issued Patents
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EFH
  name: USPTO Issued Patents
  url: http://www.uspto.gov/patft/index.html
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
ExternalDocumentID 08183925
GroupedDBID EFH
ID FETCH-uspatents_grants_081839253
IEDL.DBID EFH
IngestDate Sun Mar 05 22:30:48 EST 2023
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-uspatents_grants_081839253
OpenAccessLink https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8183925
ParticipantIDs uspatents_grants_08183925
PatentNumber 8183925
PublicationCentury 2000
PublicationDate 20120522
PublicationDateYYYYMMDD 2012-05-22
PublicationDate_xml – month: 05
  year: 2012
  text: 20120522
  day: 22
PublicationDecade 2010
PublicationYear 2012
References (2005-20518) 20050100
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Tsutsui et al. (2007/0008037) 20070100
References_xml – year: 20061000
  ident: 7123095
  contributor:
    fullname: Tsutsui et al.
– year: 20081000
  ident: 7443245
  contributor:
    fullname: Tsurumaki et al.
– year: 20040600
  ident: 2004/0108902
  contributor:
    fullname: Akamine et al.
– year: 20050600
  ident: 2005-150917
– year: 20090300
  ident: 7501896
  contributor:
    fullname: Ishikawa et al.
– year: 20080300
  ident: 2008/0068086
  contributor:
    fullname: Tsurumaki et al.
– year: 20090300
  ident: 2009/0072906
  contributor:
    fullname: Tsurumaki et al.
– year: 20050400
  ident: 2005/0083129
  contributor:
    fullname: Tsurumaki et al.
– year: 20040700
  ident: 6759906
  contributor:
    fullname: Matsunaga et al.
– year: 20050500
  ident: 2005-123861
– year: 20050100
  ident: 2005-20518
– year: 20070100
  ident: 2007/0008037
  contributor:
    fullname: Tsutsui et al.
Score 2.8537521
Snippet A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect...
SourceID uspatents
SourceType Open Access Repository
Title High frequency power amplifier and operating method thereof
URI https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8183925
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8QwEB52F0E9KSquL3LwGu0rTYtH2VIEZQ8Ke1vSJhFB09J2Ef-9M6ksXvSWF5MhYfJNyJcZgOtKKhXLWnBh8oonYVhxFcmAhzaNjY6x7jPPPT6l5UvysBKrCZTbvzAfaEa8RV36m03fDo0nV-LxPm48H4M_U4xAR9EHPt17o_RS29vMQ72YwjQLiNq1KMp92EUR6LK5of8FGsUB7Cx96yFMjDuCO6JUMNuN3OUv1lJ-MqaI0W3fqOQ0a1qKcYxowsbMzozcM9PYY2DF4vm-5NuZ1q8dMVjWwY9G8QnM8CZvToGldY02jS6GzmySG5XrVKhaShoWapvNYf6nmLN_-s5hD3E8okftKLqA2dBtzCVi5VBd-YX4BlG7dVQ
link.rule.ids 230,309,786,808,891,64385
linkProvider USPTO
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8QwEB7WVXycFBV3feXgNbp9pA886pb6WnpQ2FtJm0SEtS1tF_Hf70wrixe95cVkSJh8E_JlBuAq86V0_FxwocOMu5aVcWn7E24Zz9HKwXqXee5l5sVv7uNczAcQr__CfKIZ8Qp1aa6XTdWWHbkSj_d-43kf_JliBBYUfeCrWJRSJcrcBB3Uiw3YRIwNiNw3jeI92EEh6LQVbfMLNqJ92Eq61gMY6OIQbolUwUzds5e_WUUZypgkTrf5oFKhWFlRlGPEE9bndmbkoOnSHAGLpq93MV_PlL7XxGFJJz86OccwxLu8PgHm5TlaNToZKjBuqGWoPCFz36dhljLBCEZ_ihn_03cJ28l9lD4_zJ5OYRdB3aYXbts-g2FbL_U5AmebXXRrsgI8SXhO
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=High+frequency+power+amplifier+and+operating+method+thereof&rft.inventor=Ohta%2C+Ikuma&rft.inventor=Hayashi%2C+Norio&rft.inventor=Tsutsui%2C+Takayuki&rft.inventor=Morisawa%2C+Fuminori&rft.inventor=Hase%2C+Masatoshi&rft.number=8183925&rft.date=2012-05-22&rft.externalDBID=n%2Fa&rft.externalDocID=08183925