Methods of forming semiconductor devices

Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide...

Full description

Saved in:
Bibliographic Details
Main Authors Hyun, Sangjin, Choi, Siyoung, Shin, Yugyun, Seo, Kang-Ill, Cho, Hagju, Na, Hoonjoo, Lee, Hyosan, Park, Jun-Woong, Lee, Hye-Lan, Hong, Hyung-Seok
Format Patent
LanguageEnglish
Published 22.05.2012
Online AccessGet full text

Cover

More Information
Summary:Provided are a semiconductor device and a method of forming the same. The method may include forming a metal oxide layer on a substrate and forming a sacrificial oxide layer on the metal oxide layer. An annealing process is performed on the substrate. A formation-free energy of the sacrificial oxide layer is greater than a formation-free energy of the metal oxide layer at a process temperature of the annealing process.