CMP-first damascene process scheme

An improved metal interconnect is formed with reduced metal voids and dendrites. An embodiment includes forming a mask layer on a dielectric layer, forming openings in the mask and dielectric layers, depositing a planarization layer over the mask layer and filling the openings, planarizing to remove...

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Bibliographic Details
Main Authors Choi, Jihong, Bolom, Tibor
Format Patent
LanguageEnglish
Published 31.01.2012
Online AccessGet full text

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