Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it

2 2 2 2 Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cmto 0.1/cmand occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining re...

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Main Authors Knerer, Dieter, Huber, Andreas, Lambert, Ulrich, Passek, Friedrich
Format Patent
LanguageEnglish
Published 03.01.2012
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Abstract 2 2 2 2 Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cmto 0.1/cmand occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/mto 10 GW/mfor at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
AbstractList 2 2 2 2 Monocrystalline semiconductor wafers have defect-reduced regions, the defect-reduced regions having a density of GOI-relevant defects within the range of 0/cmto 0.1/cmand occupy overall an areal proportion of 10% to 100% of the planar area of the semiconductor wafer, wherein the remaining regions of the semiconductor wafer have a significantly higher defect density than the defect-reduced regions. The wafers may be produced by a method for annealing GOI relevant defects in the wafer, by irradiating defined regions of a side of the semiconductor wafer by laser wherein each location is irradiated with a power density of 1 GW/mto 10 GW/mfor at least 25 ms, wherein the laser emits radiation of a wavelength above the absorption edge of the wafer semiconductor material and wherein the temperature of the wafer rises by less than 20 K as a result of irradiation.
Author Knerer, Dieter
Lambert, Ulrich
Passek, Friedrich
Huber, Andreas
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