Fringe capacitor using bootstrapped non-metal layer

• Main Author: McLeod, Scott C
• Format: Patent
• Language: English
• Published: 13.12.2011

Capacitors configured in a switched-capacitor circuit on a semiconductor device may comprise very accurately matched, high capacitance density metal-to-metal capacitors, using top-plate-to-bottom-plate fringe-capacitance for obtaining the desired capacitance values. A polysilicon plate may be insert...