Metal gate stack and semiconductor gate stack for CMOS devices

• Main Authors: Adams, Charlotte D, Doris, Bruce B, Fisher, Philip, Henson, William K, Sleight, Jeffrey W
• Format: Patent
• Language: English
• Published: 04.10.2011

A semiconductor gate stack comprising a silicon oxide based gate dielectric and a doped semiconductor material is formed on a semiconductor substrate. A high-k material metal gate electrode comprising a high-k gate dielectric and a metal gate portion is also formed on the semiconductor substrate. Ox...