Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors
A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the m...
Saved in:
Main Authors | , , , , |
---|---|
Format | Patent |
Language | English |
Published |
20.09.2011
|
Online Access | Get full text |
Cover
Loading…
Abstract | A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS. |
---|---|
AbstractList | A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin sublayers to form a composite CIGS absorber layer of a desirable thickness greater than the thickness of each sublayer. In an embodiment, the method is adapted to roll-to-roll processing of CIGS PV cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer. In a particular embodiment, the graded composition is enriched in copper at a base of the layer. In an embodiment, each CIGS sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium which react in-situ to form CIGS. |
Author | Kalla, Ajay Kumar Shevchuk, Peter Alex Nath, Prem Misra, Mohan S Basava, Venugopala R |
Author_xml | – sequence: 1 givenname: Prem surname: Nath fullname: Nath, Prem – sequence: 2 givenname: Venugopala R surname: Basava fullname: Basava, Venugopala R – sequence: 3 givenname: Ajay Kumar surname: Kalla fullname: Kalla, Ajay Kumar – sequence: 4 givenname: Peter Alex surname: Shevchuk fullname: Shevchuk, Peter Alex – sequence: 5 givenname: Mohan S surname: Misra fullname: Misra, Mohan S |
BookMark | eNqNjT0KAjEQRrfQwr87zAUWVkXQWhQbO3uJyew6kMzETAJ6e7PgAawefDzeN28mLIyz5n019kmMYNhBTGJRFXpJoPgqyJmMh1B8plbLw5sPJnAYRSmTMEgPVmKsI7GjEmAw3o90pOiRyWEVQpRS64qBrLArNkvSZTPtjVdc_bho4Hy6HS9t0Whyfdb7kMyIbt9t1odut_1D-QJsF0o_ |
ContentType | Patent |
CorporateAuthor | Ascent Solar Technologies, Inc |
CorporateAuthor_xml | – name: Ascent Solar Technologies, Inc |
DBID | EFH |
DatabaseName | USPTO Issued Patents |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EFH name: USPTO Issued Patents url: http://www.uspto.gov/patft/index.html sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
ExternalDocumentID | 08021905 |
GroupedDBID | EFH |
ID | FETCH-uspatents_grants_080219053 |
IEDL.DBID | EFH |
IngestDate | Sun Mar 05 22:32:06 EST 2023 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-uspatents_grants_080219053 |
OpenAccessLink | https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8021905 |
ParticipantIDs | uspatents_grants_08021905 |
PatentNumber | 8021905 |
PublicationCentury | 2000 |
PublicationDate | 20110920 |
PublicationDateYYYYMMDD | 2011-09-20 |
PublicationDate_xml | – month: 09 year: 2011 text: 20110920 day: 20 |
PublicationDecade | 2010 |
PublicationYear | 2011 |
References | Basol (2007/0227633) 20071000 Birkmire et al. (2010/0173440) 20100700 Wendt et al. (2007/0253686) 20071100 Tuttle (2006/0096635) 20060500 Basol (2009/0117684) 20090500 Basol (2009/0199895) 20090800 Basol (2008/0093221) 20080400 Van Duren et al. (2008/0280030) 20081100 Wendt et al. (7194197) 20070300 Buller et al. (2008/0302418) 20081200 Britt et al. (2009/0258476) 20091000 Wendt et al. (2008/0247738) 20081000 Menezes (7560641) 20090700 Woods et al. (2009/0020149) 20090100 Robinson et al. (2006/0207644) 20060900 Britt et al. (2009/0258444) 20091000 Ashjaee et al. (2008/0175993) 20080700 Kushiya et al. (6048442) 20000400 Wendt et al. (2008/0226270) 20080900 Wendt et al. (6372538) 20020400 Hollars (6974976) 20051200 Basol (2008/0095938) 20080400 Britt et al. (2009/0255467) 20091000 Wendt et al. (2008/0247737) 20081000 Hollars (7544884) 20090600 Basol (2007/0093006) 20070400 Basol (2009/0226717) 20090900 Basol (7374963) 20080500 Tuttle (2006/0219547) 20061000 Bruce et al. (2009/0250722) 20091000 Tuttle (7576017) 20090800 Gillespie et al. (6323417) 20011100 Reddy et al. (2009/0223551) 20090900 Britt et al. (2009/0255469) 20091000 Mackie et al. (2010/0133093) 20100600 Stolt et al. (2008/0254202) 20081000 Britt et al. (2010/0087016) 20100400 |
References_xml | – year: 20071000 ident: 2007/0227633 contributor: fullname: Basol – year: 20090900 ident: 2009/0226717 contributor: fullname: Basol – year: 20081100 ident: 2008/0280030 contributor: fullname: Van Duren et al. – year: 20081200 ident: 2008/0302418 contributor: fullname: Buller et al. – year: 20081000 ident: 2008/0247738 contributor: fullname: Wendt et al. – year: 20081000 ident: 2008/0254202 contributor: fullname: Stolt et al. – year: 20091000 ident: 2009/0255467 contributor: fullname: Britt et al. – year: 20080900 ident: 2008/0226270 contributor: fullname: Wendt et al. – year: 20090800 ident: 2009/0199895 contributor: fullname: Basol – year: 20070300 ident: 7194197 contributor: fullname: Wendt et al. – year: 20011100 ident: 6323417 contributor: fullname: Gillespie et al. – year: 20091000 ident: 2009/0250722 contributor: fullname: Bruce et al. – year: 20020400 ident: 6372538 contributor: fullname: Wendt et al. – year: 20000400 ident: 6048442 contributor: fullname: Kushiya et al. – year: 20100600 ident: 2010/0133093 contributor: fullname: Mackie et al. – year: 20081000 ident: 2008/0247737 contributor: fullname: Wendt et al. – year: 20060500 ident: 2006/0096635 contributor: fullname: Tuttle – year: 20080400 ident: 2008/0093221 contributor: fullname: Basol – year: 20090900 ident: 2009/0223551 contributor: fullname: Reddy et al. – year: 20090800 ident: 7576017 contributor: fullname: Tuttle – year: 20071100 ident: 2007/0253686 contributor: fullname: Wendt et al. – year: 20091000 ident: 2009/0258444 contributor: fullname: Britt et al. – year: 20070400 ident: 2007/0093006 contributor: fullname: Basol – year: 20090700 ident: 7560641 contributor: fullname: Menezes – year: 20080700 ident: 2008/0175993 contributor: fullname: Ashjaee et al. – year: 20061000 ident: 2006/0219547 contributor: fullname: Tuttle – year: 20090100 ident: 2009/0020149 contributor: fullname: Woods et al. – year: 20091000 ident: 2009/0255469 contributor: fullname: Britt et al. – year: 20051200 ident: 6974976 contributor: fullname: Hollars – year: 20091000 ident: 2009/0258476 contributor: fullname: Britt et al. – year: 20060900 ident: 2006/0207644 contributor: fullname: Robinson et al. – year: 20100400 ident: 2010/0087016 contributor: fullname: Britt et al. – year: 20100700 ident: 2010/0173440 contributor: fullname: Birkmire et al. – year: 20080400 ident: 2008/0095938 contributor: fullname: Basol – year: 20090500 ident: 2009/0117684 contributor: fullname: Basol – year: 20080500 ident: 7374963 contributor: fullname: Basol – year: 20090600 ident: 7544884 contributor: fullname: Hollars |
Score | 2.818365 |
Snippet | A method of manufacture of CIGS photovoltaic cells and modules involves sequential deposition of copper indium gallium diselenide compounds in multiple thin... |
SourceID | uspatents |
SourceType | Open Access Repository |
Title | Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors |
URI | https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/8021905 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfZ3fS8MwEMePOQT1SVFx_iIPvkbbNXbps6wUYbIHhb2N5UdFWJOytsw_37tUhy_6VEjhmjZc7y755BuAu4lKI4zCMS-Vimm2KuJSjzMe60RYkZRyrGg38uwlLd7E8-JxMYBitxemQjfiNfalue-auvUBrsTfez_wvBd_Jo1AR-oDW7f2KzM35YPEYJWRmOmejAjtm-bFERygCUzZXNv8Chr5MezPQ-sJDKw7hc9Z4BYtw9qd1T2fzzBlZD3NjJ62ZgHv4w0-fYWpMDP2h6livmTa1zU20iJzVzFaMaerCecluQ9jGeHhdEoSWqxwgB1JufpNcwYsn74-FXzXzeX7hvCXZfT9Osk5DJ139gKYSIQSWH5ghqKFTBVWOtpolUzizGSxlSMY_Wnm8p97V3DYz5Nm6DHXMGw3nb3BQNuq2_AVvwDFsoxX |
link.rule.ids | 230,309,783,805,888,64375 |
linkProvider | USPTO |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLamgXicQIAYzxy4Bto1dO0ZVpXHph5A2q1amhQhrUnVh-DnY7cwcYFTpERyXnJsx1--AFxNpO-gFXZ5LqVLt1UOD7JxyN3ME1p4eTCW9Bp5NvfjV_G4uF0MIF6_hSlQjXiJY6mv27psbAeuxOO933jekz8TR6Ah9oEPs7JLlaj8JkBjFRKZ6QalogjcN43iXdhGIei0mab-ZTaiPdhMutp9GGhzAJ-zDrmoGUbvrOwR-gydRtbjmVHXVqwD-PEa-1-iM8yU_kFVMZuzzJYlVlKauS0Y5cypVN2PSeZdaUYAcfonCSUWuMWGyFxtVR8Ci6YvdzFfDzN9qwgAkzrfE_KOYGis0cfAhCekwAAEfZRMBL7EWCdTmfQmbqhCVwcjGP0p5uSftkvYSu6j9Plh_nQKO_2laYjqcwbDpmr1OVrdRl50C_oFyRCPUw |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Machine+and+process+for+sequential+multi-sublayer+deposition+of+copper+indium+gallium+diselenide+compound+semiconductors&rft.inventor=Nath%2C+Prem&rft.inventor=Basava%2C+Venugopala+R&rft.inventor=Kalla%2C+Ajay+Kumar&rft.inventor=Shevchuk%2C+Peter+Alex&rft.inventor=Misra%2C+Mohan+S&rft.number=8021905&rft.date=2011-09-20&rft.externalDBID=n%2Fa&rft.externalDocID=08021905 |