Quantum interference transistors and methods of manufacturing and operating the same

A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a gra...

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Main Authors Shin, Jai-kwang, Seo, Sun-ae, Kim, Jong-seob, Hong, Ki-ha, Chung, Hyun-jong
Format Patent
LanguageEnglish
Published 12.07.2011
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Abstract A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.
AbstractList A quantum interference transistor may include a source; a drain; N channels (N≧2), between the source and the drain, and having N−1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.
Author Kim, Jong-seob
Seo, Sun-ae
Chung, Hyun-jong
Hong, Ki-ha
Shin, Jai-kwang
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References Yoshimura et al. (4977435) 19901200
(1 508 926) 20050200
Arimoto et al. (5130766) 19920700
Bibilashvili et al. (7566897) 20090700
McCarthy et al. (2007/0194297) 20070800
Zhang et al. (2007/0064478) 20070300
Datta et al. (2007/0141790) 20070600
(2007-335532) 20071200
Pfeiffer (2007/0187694) 20070800
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