Process for manufacture of trench Schottky

A trench-type Schottky semiconductor device and a method for fabricating the trench-type Schottky semiconductor device are disclosed. The method includes the steps of forming an epitaxial (EPI) layer atop a silicon substrate, forming a nitride layer atop the EPI layer, patterning a plurality of wind...

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Main Author Richieri, Giovanni
Format Patent
LanguageEnglish
Published 07.06.2011
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Abstract A trench-type Schottky semiconductor device and a method for fabricating the trench-type Schottky semiconductor device are disclosed. The method includes the steps of forming an epitaxial (EPI) layer atop a silicon substrate, forming a nitride layer atop the EPI layer, patterning a plurality of windows in the nitride layer into an active region and a termination region, forming a plurality of trenches in the active and termination regions such that the plurality of trenches in the termination regions are spaced apart from each other so as to form a plurality of mesas, lining the first type of trenches with a gate oxide layer, and converting the mesas to oxide mesas; and then applying a barrier layer metal to the mesas in the device active area and in the termination trenches.
AbstractList A trench-type Schottky semiconductor device and a method for fabricating the trench-type Schottky semiconductor device are disclosed. The method includes the steps of forming an epitaxial (EPI) layer atop a silicon substrate, forming a nitride layer atop the EPI layer, patterning a plurality of windows in the nitride layer into an active region and a termination region, forming a plurality of trenches in the active and termination regions such that the plurality of trenches in the termination regions are spaced apart from each other so as to form a plurality of mesas, lining the first type of trenches with a gate oxide layer, and converting the mesas to oxide mesas; and then applying a barrier layer metal to the mesas in the device active area and in the termination trenches.
Author Richieri, Giovanni
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References Horng et al. (4211582) 19800700
Wu (2005/0230744) 20051000
Bondur et al. (4139442) 19790200
Cronin et al. (5539240) 19960700
Bhatia et al. (4752813) 19880600
Das et al. (5627427) 19970500
Haynie et al. (2004/0129976) 20040700
Andoh et al. (2004/0007723) 20040100
Hshieh et al. (2006/0231915) 20061000
Tsuruta (2005/0012175) 20050100
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Snippet A trench-type Schottky semiconductor device and a method for fabricating the trench-type Schottky semiconductor device are disclosed. The method includes the...
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Title Process for manufacture of trench Schottky
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