Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters

The invention concerns a method of processing a wafer in a plasma reactor chamber by controlling plural chamber parameters in accordance with desired values of plural plasma parameters. The method includes concurrently translating a set of M desired values for M plasma parameters to a set of N value...

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Bibliographic Details
Main Authors Hoffman, Daniel J, Gold, Ezra Robert
Format Patent
LanguageEnglish
Published 08.03.2011
Online AccessGet full text

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