Methods for fabricating image sensor devices

Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semicondu...

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Bibliographic Details
Main Authors Shiau, Gwo-Yuh, Liu, Ming-Chyi, Hsieh, Yuan-Chih, Fu, Shih-Chi, Tsai, Chia-Shiung
Format Patent
LanguageEnglish
Published 08.02.2011
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Summary:Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.