Method for manufacturing nitride semiconductor device

• Main Authors: Ohno, Akihito, Takemi, Masayoshi
• Format: Patent
• Language: English
• Published: 02.11.2010

A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas...