High output group III nitride light emitting diodes

A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 mil...

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Bibliographic Details
Main Authors Edmond, John Adam, Bergmann, Michael J, Emerson, David T, Haberern, Kevin Ward
Format Patent
LanguageEnglish
Published 15.06.2010
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