Capacitor for a semiconductor device and method of forming the same
In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surfa...
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Format | Patent |
Language | English |
Published |
18.05.2010
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Online Access | Get full text |
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Abstract | In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage. |
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AbstractList | In a capacitor having a high dielectric constant, the capacitor includes a cylindrical lower electrode, a dielectric layer and an upper electrode. A metal oxide layer is formed on inner, top and outer surfaces of the lower electrode as the dielectric layer. A first sub-electrode is formed on a surface of the dielectric layer along the profile of the lower electrode and a second sub-electrode is continuously formed on the first sub-electrode corresponding to the top surface of the lower electrode, so an opening portion of the lower electrode is covered with the second sub-electrode. The first and second sub-electrodes include first and second metal nitride layers in which first and second stresses are applied, respectively. Directions of the first and second stresses are opposite to each other. Accordingly, cracking is minimized in the upper electrode with the high dielectric constant, thereby reducing current leakage. |
Author | Cho, Young-Joo Lee, Hyun-Suk Kim, Jung-Wook Kim, Rak-Hwan Lim, Hyun-Seok |
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References | (2001-177072) 20010600 Horii (6630387) 20031000 Zheng (6794245) 20040900 (84/02128) 19840600 Fiordalice et al. (5420072) 19950500 (2004-0002222) 20040100 Kurihara et al. (2004/0130849) 20040700 Cheng et al. (6146991) 20001100 Yeo et al. (7087482) 20060800 Kundalgurki et al. (2005/0093049) 20050500 Hideki (6294425) 20010900 Iijima et al. (6632721) 20031000 (2002-0092465) 20021200 Thakur (6573552) 20030600 (2003-0002789) 20030100 Coursey (6790725) 20040900 Senzaki (2006/0151852) 20060700 |
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