Rapid thermal processing using energy transfer layers

A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in t...

Full description

Saved in:
Bibliographic Details
Main Author Timans, Paul J
Format Patent
LanguageEnglish
Published 05.01.2010
Online AccessGet full text

Cover

Loading…
Abstract A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
AbstractList A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for processing the wafer, includes applying an energy transfer layer to at least a portion of the wafer, and exposing the wafer to an energy source in the process chamber in a way which subjects the wafer to a thermal profile such that the energy transfer layer influences at least one part of the thermal profile. The thermal profile has at least a first elevated temperature event. The method further includes, in time relation to the thermal profile, removing the energy transfer layer in the process chamber at least sufficiently for subjecting the wafer to a subsequent step. An associated intermediate condition of the wafer is described.
Author Timans, Paul J
Author_xml – sequence: 1
  givenname: Paul J
  surname: Timans
  fullname: Timans, Paul J
BookMark eNrjYmDJy89L5WQwDUosyExRKMlILcpNzFEoKMpPTi0uzsxLVygFk6l5qUXplQolRYl5xWmpRQo5iZWpRcU8DKxpiTnFqbxQmptBwc01xNlDt7S4ILEkNa-kOD4dqANIGZibmRgZGZgaE6EEAGQVMDs
ContentType Patent
CorporateAuthor Mattson Technology, Inc
CorporateAuthor_xml – name: Mattson Technology, Inc
DBID EFH
DatabaseName USPTO Issued Patents
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EFH
  name: USPTO Issued Patents
  url: http://www.uspto.gov/patft/index.html
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
ExternalDocumentID 07642205
GroupedDBID EFH
ID FETCH-uspatents_grants_076422053
IEDL.DBID EFH
IngestDate Sun Mar 05 22:30:31 EST 2023
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-uspatents_grants_076422053
OpenAccessLink https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7642205
ParticipantIDs uspatents_grants_07642205
PatentNumber 7642205
PublicationCentury 2000
PublicationDate 20100105
PublicationDateYYYYMMDD 2010-01-05
PublicationDate_xml – month: 01
  year: 2010
  text: 20100105
  day: 05
PublicationDecade 2010
PublicationYear 2010
References L. A. Clevenger et al., "Explosive silicidation in nickel/amorphous-silicon multilayer thin films", J. Appl. Phys. 67, (1990) 2894.
Tay et al. (6403923) 20020600
Moise et al. (6444542) 20020900
Boursat et al. (2002/0053720) 20020500
Yagi et al "3C-SiC growth by alternate supply of SiH2Cl2 and C2H2", 1997, Journal of Crystal Growth, vol. 174, pp. 653-657.
Min et al., "Atomic Layer Deposition of TiN Thin Films by Sequential Introduction of Ti Precursor and NH3," Mat. Res. Soc. Symp. Proc., vol. 514, pp. 337-342 (1998).
Talwar et al. (6300208) 20011000
Seibel et al. (6777317) 20040800
Bae et al. (6426277) 20020700
Sibley (5538230) 19960700
Timans (7453051) 20081100
T. Sameshima et al., "Rapid Thermal Annealing Using the Combustion of H2 with N2O", Appl. Phys. Lett. 69, (1996) 1205.
Kub et al. (2004/0009649) 20040100
Xie et al., "Oxidation reaction during laser cladding of SAE1045 carbon steel with SiC/Cu alloy powder", Journal of Materials Science 36 (2001), pp. 1501-1505.
Fair et al. (5523262) 19960600
Westhoff et al. (2008/0079024) 20080400
Cao (2007/0284579) 20071200
Kub et al. (2006/0199353) 20060900
Craven et al. (2008/0158557) 20080700
Catabay et al. (6232658) 20010500
Talwar et al. (7145104) 20061200
Mineji (2006/0199358) 20060900
"Silicon Carbide, SiC", Jan. 2005, http://www.accuratus.com/silicar.html.
Talwar et al. (2005/0189340) 20050900
Paquet et al. (5822675) 19981000
Bedell et al. (2007/0105350) 20070500
Shih et al. (6100150) 20000800
"Oxidation Theory", Dec. 28, 2002, http://www.mse.vt.edu/faculty/hendricks/courses/mse2224/manual/oxidation-theory.htm.
Autryve et al. (2008/0230154) 20080900
Zhang et al. (7381657) 20080600
"SPI Plamsa-Prep II Plasma Etcher, Cleaner and Asher", Dec. 31, 2004, http://www.2spi.com/catalog/instruments/etchers1.shtml.
Lowe et al. (4621413) 19861100
Horning (2005/0050971) 20050300
Anderson et al. (2008/0185649) 20080800
Yoo (2006/0128160) 20060600
Haga et. al. (3398033) 19680800
Talwar et al. (6380044) 20020400
Y. Z. Hu et al., "In Situ Rapid Thermal Oxidation and Reduction of Copper Thin Films and their Applications in Ultralarge Scale Integration", J. Electrochem. Soc. 148, (2001) G669.
McConnell, Angela D., S. Uma, K. Goodson, "Thermal Conductivity of Doped Polysilicon Layers", Sep. 2001, Journal of Microelectromechanical Systems, vol. 10, No. 3.
(2004211053) 20040700
Tay et al. (6359263) 20020300
Bjeletich et al "Electrical characterization of photo-oxidized Si1-x-yGexCy films", May 2004, Microelectronic Engineering, vol. 72, Issue1-4, pp. 218-222.
Zhang (2006/0284221) 20061200
Talwar et al. (6365476) 20020400
Timans (7015422) 20060300
Neyret et al. (6962858) 20051100
Jackson et al. (4615766) 19861000
Basceri et al. (2006/0070637) 20060400
Byun et al. (5712181) 19980100
Vandentop et al. (2006/0065935) 20060300
Seibel et al. (2003/0045074) 20030300
Chao et al. (2006/0049059) 20060300
Yoo (6897162) 20050500
Talwar et al. (6645838) 20031100
Mallozzi et al. (3850698) 19741100
Ajayan et al. (2003/0183504) 20031000
Curello et al. (2006/0208337) 20060900
Burke et al. (6090677) 20000700
Mercaldi et al. (2002/0066534) 20020600
Sadana et al. (2006/0040476) 20060200
Shimada et al "Preparation and high temperature oxidation of SiC compositionally graded graphite coated with HfO2", May 2002, Carbon, vol. 40, Issue 13, pp. 2469-2475.
Masuko et al. (2007/0098995) 20070500
Pan et al. (6900143) 20050500
Fan et al. (4309225) 19820100
Nishizawa (6617244) 20030900
Robinson et al. (6064081) 20000500
Mancini et al. (2009/0008748) 20090100
Talwar et al. (6420264) 20020700
Yoon (2006/0138525) 20060600
Talwar et al. (6274488) 20010800
Powell et al. (2009/0075403) 20090300
Tay et al. (2001/0040156) 20011100
Yamamoto et al. (2005/0212137) 20050900
Talwar et al. (6635541) 20031000
Sachdev et al. (2008/0017223) 20080100
R. Sharangpani et al., "Rapid Thermal Processing Using Steam", Electrochemical Society Proceedings, vol. 2000-9 (Electrochemical Society, Pennington, 2000) p. 203.
Abbott et al. (2001/0003336) 20010600
Liao et al "Thermoelectric characterization of Si thin films in silicon-on-insulator wafers", Sep. 1999, Journal of Applied Physics, vol. 86, pp. 3204-3208.
Forbes (7271445) 20070900
References_xml – year: 20031000
  ident: 2003/0183504
  contributor:
    fullname: Ajayan et al.
– year: 20000500
  ident: 6064081
  contributor:
    fullname: Robinson et al.
– year: 20051100
  ident: 6962858
  contributor:
    fullname: Neyret et al.
– year: 19861000
  ident: 4615766
  contributor:
    fullname: Jackson et al.
– year: 20060900
  ident: 2006/0208337
  contributor:
    fullname: Curello et al.
– year: 20011100
  ident: 2001/0040156
  contributor:
    fullname: Tay et al.
– year: 20070500
  ident: 2007/0098995
  contributor:
    fullname: Masuko et al.
– year: 19680800
  ident: 3398033
  contributor:
    fullname: Haga et. al.
– year: 20020700
  ident: 6420264
  contributor:
    fullname: Talwar et al.
– year: 20080900
  ident: 2008/0230154
  contributor:
    fullname: Autryve et al.
– year: 20090300
  ident: 2009/0075403
  contributor:
    fullname: Powell et al.
– year: 20050900
  ident: 2005/0189340
  contributor:
    fullname: Talwar et al.
– year: 20080100
  ident: 2008/0017223
  contributor:
    fullname: Sachdev et al.
– year: 20071200
  ident: 2007/0284579
  contributor:
    fullname: Cao
– year: 20080800
  ident: 2008/0185649
  contributor:
    fullname: Anderson et al.
– year: 20000800
  ident: 6100150
  contributor:
    fullname: Shih et al.
– year: 19960700
  ident: 5538230
  contributor:
    fullname: Sibley
– year: 20020400
  ident: 6380044
  contributor:
    fullname: Talwar et al.
– year: 20031100
  ident: 6645838
  contributor:
    fullname: Talwar et al.
– year: 20060900
  ident: 2006/0199358
  contributor:
    fullname: Mineji
– year: 20061200
  ident: 7145104
  contributor:
    fullname: Talwar et al.
– year: 20030300
  ident: 2003/0045074
  contributor:
    fullname: Seibel et al.
– year: 20050500
  ident: 6897162
  contributor:
    fullname: Yoo
– year: 19981000
  ident: 5822675
  contributor:
    fullname: Paquet et al.
– year: 20060900
  ident: 2006/0199353
  contributor:
    fullname: Kub et al.
– year: 20040800
  ident: 6777317
  contributor:
    fullname: Seibel et al.
– year: 19820100
  ident: 4309225
  contributor:
    fullname: Fan et al.
– year: 20011000
  ident: 6300208
  contributor:
    fullname: Talwar et al.
– year: 20080600
  ident: 7381657
  contributor:
    fullname: Zhang et al.
– year: 20020500
  ident: 2002/0053720
  contributor:
    fullname: Boursat et al.
– year: 20060300
  ident: 2006/0049059
  contributor:
    fullname: Chao et al.
– year: 20020300
  ident: 6359263
  contributor:
    fullname: Tay et al.
– year: 20020400
  ident: 6365476
  contributor:
    fullname: Talwar et al.
– year: 20060300
  ident: 2006/0065935
  contributor:
    fullname: Vandentop et al.
– year: 20010800
  ident: 6274488
  contributor:
    fullname: Talwar et al.
– year: 20010500
  ident: 6232658
  contributor:
    fullname: Catabay et al.
– year: 20020700
  ident: 6426277
  contributor:
    fullname: Bae et al.
– year: 20020600
  ident: 2002/0066534
  contributor:
    fullname: Mercaldi et al.
– year: 20050900
  ident: 2005/0212137
  contributor:
    fullname: Yamamoto et al.
– year: 20060600
  ident: 2006/0128160
  contributor:
    fullname: Yoo
– year: 19980100
  ident: 5712181
  contributor:
    fullname: Byun et al.
– year: 20081100
  ident: 7453051
  contributor:
    fullname: Timans
– year: 20030900
  ident: 6617244
  contributor:
    fullname: Nishizawa
– year: 20070900
  ident: 7271445
  contributor:
    fullname: Forbes
– year: 20061200
  ident: 2006/0284221
  contributor:
    fullname: Zhang
– year: 19960600
  ident: 5523262
  contributor:
    fullname: Fair et al.
– year: 20060400
  ident: 2006/0070637
  contributor:
    fullname: Basceri et al.
– year: 20050500
  ident: 6900143
  contributor:
    fullname: Pan et al.
– year: 20000700
  ident: 6090677
  contributor:
    fullname: Burke et al.
– year: 20020600
  ident: 6403923
  contributor:
    fullname: Tay et al.
– year: 20080400
  ident: 2008/0079024
  contributor:
    fullname: Westhoff et al.
– year: 20070500
  ident: 2007/0105350
  contributor:
    fullname: Bedell et al.
– year: 20010600
  ident: 2001/0003336
  contributor:
    fullname: Abbott et al.
– year: 19741100
  ident: 3850698
  contributor:
    fullname: Mallozzi et al.
– year: 20060300
  ident: 7015422
  contributor:
    fullname: Timans
– year: 20031000
  ident: 6635541
  contributor:
    fullname: Talwar et al.
– year: 20040100
  ident: 2004/0009649
  contributor:
    fullname: Kub et al.
– year: 20060600
  ident: 2006/0138525
  contributor:
    fullname: Yoon
– year: 20080700
  ident: 2008/0158557
  contributor:
    fullname: Craven et al.
– year: 19861100
  ident: 4621413
  contributor:
    fullname: Lowe et al.
– year: 20050300
  ident: 2005/0050971
  contributor:
    fullname: Horning
– year: 20020900
  ident: 6444542
  contributor:
    fullname: Moise et al.
– year: 20090100
  ident: 2009/0008748
  contributor:
    fullname: Mancini et al.
– year: 20040700
  ident: 2004211053
– year: 20060200
  ident: 2006/0040476
  contributor:
    fullname: Sadana et al.
Score 2.763678
Snippet A method that is performed for heat treating a semiconductor wafer in a process chamber, as an intermediate part of an overall multi-step technique for...
SourceID uspatents
SourceType Open Access Repository
Title Rapid thermal processing using energy transfer layers
URI https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7642205
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3PS8MwFH7MIehOioqbP8jBazTWti7nsVI8yBAHu41nk4jQdaVN8d_fe6kML3rJIYHkkZB8X8j3vgDcoXWmUMZIwkIlY5dGUlvUkqDNpNrwX9xB5fua5sv4ZZWsBpDvc2E2tI1kTbG0911b-20QV9Lx3i-87M2f2SOwYveB76rcolkY9_BMRDpiM9ODqWJp1zzLR3BEXRBlq3z7CzSyEzhchNpTGNjqDJI3rL-MYMK1wVLUvUKfkEN0obQhC0_4wCRtI0pkNnwOIpu_z3K5H2P92bB2Za1-Ynm6gCHd4e0lCOtU5LSK2RczxgKREzqZazhdYKGiMYz_7GbyT9sVHPfP2Y9SJdcw9E1nbwgl_cdtmIIddVNzDQ
link.rule.ids 230,309,786,808,891,64396
linkProvider USPTO
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8QwEB6WVXycFBXXZw5eo7G2lZ51S32wFFHYWxmbRIRut7Qp_n1nUlm86CWHBCZDXt8XMvMF4AKN1aXSWhIWKhnaOJCJwUQStOk40fwXt4_yncXZW_g4j-YjyFa5MAvaRrIhX7rLvmvc0gdX0vE-TLwcxJ9ZI7Bm9YGvulqizrW9uiUiHbCY6RpjLK_1aZptwyYZIdJWu-4XbKQ7sJ772l0YmXoPohdsPrVgyrXASjRDjD5hh-h9aXwennCeS5pWVMh8eB9EOn29y-Sqj-Kj5eiVQv14c3MAY7rFm0MQxqrAJipkZcwQS0RO6WS2YZMSSxVMYPKnmaN_2s5hI79Pi-eH2dMxbA1v29dSRScwdm1vTgky3fuZH41vRuZ2CQ
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Rapid+thermal+processing+using+energy+transfer+layers&rft.inventor=Timans%2C+Paul+J&rft.number=7642205&rft.date=2010-01-05&rft.externalDBID=n%2Fa&rft.externalDocID=07642205