Method of depositing an amorphous carbon film for etch hardmask application
Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing...
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Format | Patent |
Language | English |
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29.12.2009
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Abstract | Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both. |
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AbstractList | Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both. |
Author | Kwan, Michael Chiu M'Saad, Hichem Wang, Yuxiang May Rathi, Sudha S. R |
Author_xml | – sequence: 1 givenname: Yuxiang May surname: Wang fullname: Wang, Yuxiang May – sequence: 2 givenname: Sudha S. R surname: Rathi fullname: Rathi, Sudha S. R – sequence: 3 givenname: Michael Chiu surname: Kwan fullname: Kwan, Michael Chiu – sequence: 4 givenname: Hichem surname: M'Saad fullname: M'Saad, Hichem |
BookMark | eNqNyjsKAjEQANAUWvi7w1xAWNhFtxdFEDt7GZPJJpjMhEz2_iJ4AKvXvLVZsDCtzO1OLYgD8eCoiMYWeQJkwCy1BJkVLNaXMPiYMnipQM0GCFhdRn0DlpKixRaFt2bpMSntfm4MXM6P03U_a8FG3PQ5VfzSHQ_9OAxd_0f5AD0XOB4 |
ContentType | Patent |
CorporateAuthor | Applied Materials, Inc |
CorporateAuthor_xml | – name: Applied Materials, Inc |
DBID | EFH |
DatabaseName | USPTO Issued Patents |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EFH name: USPTO Issued Patents url: http://www.uspto.gov/patft/index.html sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
ExternalDocumentID | 07638440 |
GroupedDBID | EFH |
ID | FETCH-uspatents_grants_076384403 |
IEDL.DBID | EFH |
IngestDate | Sun Mar 05 22:30:15 EST 2023 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-uspatents_grants_076384403 |
OpenAccessLink | https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7638440 |
ParticipantIDs | uspatents_grants_07638440 |
PatentNumber | 7638440 |
PublicationCentury | 2000 |
PublicationDate | 20091229 |
PublicationDateYYYYMMDD | 2009-12-29 |
PublicationDate_xml | – month: 12 year: 2009 text: 20091229 day: 29 |
PublicationDecade | 2000 |
PublicationYear | 2009 |
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References_xml | – year: 20001000 ident: 6140224 contributor: fullname: Lin – year: 20040200 ident: 2004/0038537 contributor: fullname: Liu et al. – year: 20020300 ident: 6358573 contributor: fullname: Raoux et al. – year: 20021000 ident: 6458516 contributor: fullname: Ye et al. – year: 20000300 ident: 6035803 contributor: fullname: Robles et al. – year: 20020500 ident: 6395650 contributor: fullname: Callegari et al. – year: 20000800 ident: 6098568 contributor: fullname: Raoux et al. – year: 20010200 ident: 6183930 contributor: fullname: Ueda et al. – year: 19990700 ident: 5930655 contributor: fullname: Cooney, III et al. – year: 20011100 ident: 6316347 contributor: fullname: Chang et al. – year: 19910600 ident: 5022959 contributor: fullname: Itoh et al. – year: 19991100 ident: 5981000 contributor: fullname: Grill et al. – year: 19970200 ident: 09 045633 – year: 19990200 ident: 5866920 contributor: fullname: Matsumoto et al. – year: 20030400 ident: 6541397 contributor: fullname: Bencher – year: 20011200 ident: 6333255 contributor: fullname: Sekiguchi – year: 19901200 ident: 4975144 contributor: fullname: Yamazaki et al. – year: 20040900 ident: 2004/0180551 contributor: fullname: Biles et al. – year: 20010700 ident: 2001/0007788 contributor: fullname: Chang et al. – year: 20050700 ident: 6913992 contributor: fullname: Schmitt et al. – year: 20030600 ident: 6573030 contributor: fullname: Fairbairn et al. – year: 20000500 ident: 6057226 contributor: fullname: Wong – year: 20000500 ident: 6066577 contributor: fullname: Cooney, III et al. – year: 19990100 ident: 11 026578 – year: 20030500 ident: 2003/0091938 contributor: fullname: Fairbairn et al. – year: 19990300 ident: 0 901 156 – year: 19980600 ident: 5759913 contributor: fullname: Fulford, Jr. et al. – year: 19981100 ident: 5830332 contributor: fullname: Babich et al. – year: 20010500 ident: 6235629 contributor: fullname: Takenaka – year: 20020400 ident: 6380106 contributor: fullname: Lim et al. – year: 20001000 ident: 6140226 contributor: fullname: Grill et al. – year: 20001100 ident: 6153935 contributor: fullname: Edelstein et al. – year: 19980800 ident: 5789320 contributor: fullname: Andricacos et al. – year: 20030700 ident: 6596627 contributor: fullname: Mandal – year: 20020700 ident: 6413852 contributor: fullname: Grill et al. – year: 20030900 ident: 6624064 contributor: fullname: Sahin et al. – year: 20010400 ident: 6211065 contributor: fullname: Xi et al. – year: 20010400 ident: 6214730 contributor: fullname: Cooney, III et al. – year: 20020300 ident: 6358804 contributor: fullname: Kobayashi et al. – year: 20050200 ident: 6852647 contributor: fullname: Bencher – year: 20010200 ident: 6184572 contributor: fullname: Mountsier et al. – year: 19931100 ident: 5262262 contributor: fullname: Yagi et al. – year: 20050400 ident: 6884733 contributor: fullname: Dakshina-Murthy et al. – year: 20001200 ident: 6165890 contributor: fullname: Kohl et al. – year: 20010400 ident: 6214637 contributor: fullname: Kim et al. – year: 20020300 ident: 6352922 contributor: fullname: Kim – year: 19990500 ident: 5900288 contributor: fullname: Kuhman et al. – year: 20020700 ident: 6423384 contributor: fullname: Khazeni et al. – year: 20031000 ident: 6635735 contributor: fullname: Zhang et al. – year: 20020700 ident: 2002/0090794 contributor: fullname: Chang et al. – year: 20010900 ident: 6291334 contributor: fullname: Somekh – year: 20040200 ident: 2004/0023502 contributor: fullname: Tzou et al. – year: 19971000 ident: 5674573 contributor: fullname: Mitani et al. – year: 19991100 ident: 5986344 contributor: fullname: Subramanion et al. – year: 20020200 ident: 6346747 contributor: fullname: Grill et al. – year: 20000400 ident: 6054379 contributor: fullname: Yau et al. – year: 20050200 ident: 6853043 contributor: fullname: Yeh et al. – year: 20040200 ident: 103 28 578 – year: 20030400 ident: 6541842 contributor: fullname: Meynen et al. – year: 20040400 ident: 2004/0072430 contributor: fullname: Huang et al. – year: 20020100 ident: 2002/0001778 contributor: fullname: Latchford et al. – year: 20040800 ident: 2004/0166691 contributor: fullname: Nieh et al. – year: 20000200 ident: 6030901 contributor: fullname: Hopper et al. – year: 20000300 ident: 6043167 contributor: fullname: Lee et al. – year: 19991200 ident: 5998100 contributor: fullname: Azuma et al. – year: 20020800 ident: 6428894 contributor: fullname: Babich et al. – year: 20010300 ident: 6203898 contributor: fullname: Kohler et al. – year: 20041100 ident: 2004/0229470 contributor: fullname: Rui et al. – year: 19951000 ident: 5461003 contributor: fullname: Havemann et al. – year: 20020700 ident: 2002/0086547 contributor: fullname: Mui et al. – year: 20000200 ident: WO 00/05763 – year: 20000500 ident: 6064118 contributor: fullname: Sasaki – year: 19991200 ident: 6008140 contributor: fullname: Ye et al. – year: 19990300 ident: 5882830 contributor: fullname: Visser et al. – year: 20000600 ident: 6080529 contributor: fullname: Ye et al. – year: 20031000 ident: 6635583 contributor: fullname: Bencher et al. – year: 19900100 ident: 0 381 109 – year: 20011200 ident: 6331380 contributor: fullname: Ye et al. – year: 20011100 ident: 6323119 contributor: fullname: Xi et al. – year: 20001100 ident: 6143476 contributor: fullname: Ye et al. |
Score | 2.7630692 |
Snippet | Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a... |
SourceID | uspatents |
SourceType | Open Access Repository |
Title | Method of depositing an amorphous carbon film for etch hardmask application |
URI | https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/7638440 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLbGhAScQIAYL_nANdC0Sdee0aoKNLQDSLtNCU0mxJpObSf-Pk47TbvANZYcx5FjW_lsAzyEQSHHqeaMp9IwkRrOdCQSFlhr48QKovni5OlbnH-Il7mcDyDf1cKUZEZsTbI0j5tm3VYduJKe9_7iWd_82fcIdL77wI9bVaqYFfaJ7CQRgpL3gyTw0L5Jlp_AEbGgkM21zZ7TyE7hcNatnsHAuHN4nXbDmrGyWJgeK-WWqByqsqLDUgaOn6rWlUP7tSqRgkn0KkVfFlWq5hv3_povALPJ-3POdjsvlrVHtCyCrYTRJQwpszdXgJFJ0sJoKThF9XJsVGzjWEZWKG14xM0IRn-yuf6HdgPH4XbMQZjewrCtN-aOfGer7zvF_AKU7Hs1 |
link.rule.ids | 230,309,783,805,888,64375 |
linkProvider | USPTO |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLamgXicQIDYeOXANdBH0rVnWFUYm3oAabcqocmEWNOp7cTfx2mnaRe4xpLjOHJsy58dgHvPyfkoki51I64oi5RLpc9C6mitg1AzpNnm5OksSD7Y65zPe5Bse2EKNCO6Qlnqh3W9asoWXInPe3fxtBv-bGcEGjt94McsS5GnuX5EOwkZw-R9z5aiLLhvHCfHcIhMMGgzTb3jNuIT2E_b1VPoKXMGk2n7XTMpNclVh5YyCyIMEUWJx8UcnHyKSpaG6K9lQTCcJFapxDZGFaL-JjvV5nMg8fj9KaHbnbNFZTEtmbOR0b-APub26hKIr8IoV5IzF-N6PlIi0EHAfc2EVK7vqgEM_mQz_Id2Bwfpc5y9vcwmV3Dkbf488KJr6DfVWt2gI23kbaujX8irfjE |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Method+of+depositing+an+amorphous+carbon+film+for+etch+hardmask+application&rft.inventor=Wang%2C+Yuxiang+May&rft.inventor=Rathi%2C+Sudha+S.+R&rft.inventor=Kwan%2C+Michael+Chiu&rft.inventor=M%27Saad%2C+Hichem&rft.number=7638440&rft.date=2009-12-29&rft.externalDBID=n%2Fa&rft.externalDocID=07638440 |