Folded-gate MOS transistor

• Main Authors: Montanini, Pietro, Annese, Marco, Zullino, Lucia
• Format: Patent
• Language: English
• Published: 08.12.2009

An insulated-gate transistor includes a semiconductor layer of a first conductivity type, an insulated gate comprising a trench gate extending into the semiconductor layer, a source and a drain regions of a second conductivity type formed in the semiconductor layer at respective sides of the trench...