Trench gate type insulated gate bipolar transistor

• Main Authors: Ozeki, Yoshihiko, Yamamoto, Kensaku
• Format: Patent
• Language: English
• Published: 03.03.2009

A trench gate type IGBT includes: a first semiconductor layer; a second semiconductor on the first semiconductor layer; a third semiconductor on the second semiconductor layer; trenches for separating the third semiconductor layer into first regions and second regions; a gate insulation film on an i...