Method of fabricating non-volatile memory

• Main Authors: Tseng, Wei-Chung, Wei, Houng-Chi, Pittikoun, Saysamone
• Format: Patent
• Language: English
• Published: 04.11.2008

A method of fabricating non-volatile memory is provided. A plurality of first memory cells is formed on the memory cell region of a substrate. Each first memory cell comprises a first composite layer, a first gate and a cap layer. There is a gap between two adjacent first memory cells. Then, a plura...