Semiconductor device and process for producing the same

A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element...

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Main Authors Ishitsuka, Norio, Miura, Hideo, Ikeda, Shuji, Suzuki, Norio, Matsuda, Yasushi, Yoshida, Yasuko, Yamamoto, Hirohiko, Kobayashi, Masamichi, Takamatsu, Akira, Shimizu, Hirofumi, Fukuda, Kazushi, Horibe, Shinichi, Nozoe, Toshio
Format Patent
LanguageEnglish
Published 22.07.2008
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Abstract A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
AbstractList A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
Author Horibe, Shinichi
Ishitsuka, Norio
Matsuda, Yasushi
Yamamoto, Hirohiko
Yoshida, Yasuko
Nozoe, Toshio
Suzuki, Norio
Fukuda, Kazushi
Shimizu, Hirofumi
Miura, Hideo
Takamatsu, Akira
Ikeda, Shuji
Kobayashi, Masamichi
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