Non-uniform ion implantation apparatus and method thereof
A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide io...
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Format | Patent |
Language | English |
Published |
29.04.2008
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Abstract | A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer. Among the wide ion beams, at least one wide ion beam has a different dose from that of at least one different wide ion beam. Since the wide ion beams are irradiated at different doses to the wafer, a smooth circular border is formed between the regions to which the impurity ions are implanted to different concentrations. Since the position of the wafer is suitably changed for the wide ion beams, it is possible to control disposition of the regions implanted with the impurity ions of different concentrations. |
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AbstractList | A non-uniform ion implantation apparatus comprises a wide ion beam generator configured to generate a plurality of wide ion beams to irradiate at least two regions on the entire area of a wafer, and a wafer rotating device configured to rotate the wafer in a predetermined direction while the wide ion beams generated by the wide ion beam generator are irradiated to the wafer. Among the wide ion beams, at least one wide ion beam has a different dose from that of at least one different wide ion beam. Since the wide ion beams are irradiated at different doses to the wafer, a smooth circular border is formed between the regions to which the impurity ions are implanted to different concentrations. Since the position of the wafer is suitably changed for the wide ion beams, it is possible to control disposition of the regions implanted with the impurity ions of different concentrations. |
Author | Lee, Min Yong Rouh, Kyoung Bong Jin, Seung Woo |
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References | (2003-178995) 20030600 Farley (6297510) 20011000 Farley et al. (6870170) 20050300 (558755) 20031000 (04-092349) 19920300 Sugitani et al. (6573517) 20030600 (2003-132835) 20030500 Yamazaki et al. (6956325) 20051000 (2199758) 19900800 Riahi (4855604) 19890800 (10-2001-0036042) 20010500 (10-1995-0030218) 19951100 (2001-512904) 20010800 Lee (2007/0023696) 20070200 (10-2000-0073648) 20000500 Renau et al. (6313475) 20011100 |
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