Nonvolatile memory device and method of manufacturing the same

Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer...

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Bibliographic Details
Main Authors Chae, Hee-soon, Kim, Chung-woo, Seo, Kwang-youl, Han, Tae-hyun, Kim, Byung-chul, Kim, Joo-yeon
Format Patent
LanguageEnglish
Published 24.04.2007
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