Electroabsorption modulator

• Main Authors: Bour, David P, Tandon, Ashish, Corzine, Scott W, Lin, Chaokun
• Format: Patent
• Language: English
• Published: 28.11.2006

The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure locat...