Semiconductor integrated circuit device

A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by...

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Bibliographic Details
Main Authors Tamaru, Tsuyoshi, Oomori, Kazutoshi, Miura, Noriko, Aoki, Hideo, Oshima, Takayuki
Format Patent
LanguageEnglish
Published 18.07.2006
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Summary:A semiconductor integrated circuit device has a semiconductor substrate, an interlayer insulating film including SiOF films formed on a main surface of the semiconductor substrate, a wiring groove formed by dry etching of the interlayer insulating film, and a Cu wiring buried in the wiring groove by a Damascene method, wherein a silicon oxynitride film is provided between a silicon nitride film serving as an etching stopper layer for the dry etching and the SiOF film, so that free F generated in the SiOF film is trapped with the silicon oxynitride film.