Low oxygen content photoresist stripping process for low dielectric constant materials

• Main Authors: Shieh, Jyu-Horng, Su, Yi-Nien, Tsai, Jang-Shiang, Yeh, Chen-Nan, Tao, Hun-Jan
• Format: Patent
• Language: English
• Published: 18.04.2006

34A plasma containing 5-10% oxygen and 90-95% of an inert gas strips photoresist from over a low-k dielectric material formed on or in a semiconductor device. The inert gas may be nitrogen, hydrogen, or a combination thereof, or it may include at least one of nitrogen, hydrogen, NH, Ar, He, and CF....