Semiconductor integrated circuit device

The present invention provides a semiconductor integrated circuit device equipped with a memory circuit, which realizes speeding up of its operation in a simple configuration or realizes high reliability and enhancement of product yields in a simple configuration. A memory cell is selected from with...

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Main Authors Hasegawa, Masatoshi, Miyaoka, Shuichi
Format Patent
LanguageEnglish
Published 04.04.2006
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Abstract The present invention provides a semiconductor integrated circuit device equipped with a memory circuit, which realizes speeding up of its operation in a simple configuration or realizes high reliability and enhancement of product yields in a simple configuration. A memory cell is selected from within a memory array having a plurality of memory cells by a selector or selection circuit. MOSFETs constituting a precharge circuit provided for signal lines for transferring a read signal therefrom to a main amplifier are respectively brought to an on state based on a memory cell select start signal transferred to the selection circuit and brought to an off state prior to the transfer of the read signal from the memory cell to thereby complete precharging, whereby NBTI degradation at standby is avoided.
AbstractList The present invention provides a semiconductor integrated circuit device equipped with a memory circuit, which realizes speeding up of its operation in a simple configuration or realizes high reliability and enhancement of product yields in a simple configuration. A memory cell is selected from within a memory array having a plurality of memory cells by a selector or selection circuit. MOSFETs constituting a precharge circuit provided for signal lines for transferring a read signal therefrom to a main amplifier are respectively brought to an on state based on a memory cell select start signal transferred to the selection circuit and brought to an off state prior to the transfer of the read signal from the memory cell to thereby complete precharging, whereby NBTI degradation at standby is avoided.
Author Hasegawa, Masatoshi
Miyaoka, Shuichi
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Title Semiconductor integrated circuit device
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