Semiconductor device using high-dielectric-constant material and method of manufacturing the same
A semiconductor device includes a MOS transistor, interlayer dielectric film, first and second high-dielectric-constant films, and first and second conductive films. The MOS transistor is formed on a semiconductor substrate. The interlayer dielectric film is formed on the semiconductor substrate so...
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Main Author | |
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Format | Patent |
Language | English |
Published |
21.02.2006
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Online Access | Get full text |
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Summary: | A semiconductor device includes a MOS transistor, interlayer dielectric film, first and second high-dielectric-constant films, and first and second conductive films. The MOS transistor is formed on a semiconductor substrate. The interlayer dielectric film is formed on the semiconductor substrate so as to cover the MOS transistor. The first high-dielectric-constant film is formed on the interlayer dielectric film and has an opening portion that reaches the interlayer dielectric film. The first conductive film contains a metal element and is formed to be partially embedded in the opening portion. The second high-dielectric-constant film is formed on the first conductive film. The second conductive film is formed on the second high-dielectric-constant film. |
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