Process for making air gap containing semiconducting devices and resulting semiconducting device

• Main Authors: Townsend, III, Paul H, Foster, Kenneth L
• Format: Patent
• Language: English
• Published: 20.09.2005

3A method of forming at least a partial air gap within a semiconducting device and the resulting devices, said method comprising the steps of: (a) depositing a sacrificial polymeric composition in one or more layers of the device during its formation; (b) coating the device with one or more layers o...