Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material
The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: The invention further concerns nanostructures formed according to one of said methods as well as...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
20.09.2005
|
Online Access | Get full text |
Cover
Loading…
Summary: | The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: The invention further concerns nanostructures formed according to one of said methods as well as devices comprising said nanostructures. |
---|