Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric material

The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: The invention further concerns nanostructures formed according to one of said methods as well as...

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Bibliographic Details
Main Authors Mazen, Frédéric, Baron, Thierry, Hartmann, Jean-Michel, Semeria, Marie-Noelle
Format Patent
LanguageEnglish
Published 20.09.2005
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Summary:The invention concerns a method for forming nanostructures of semi-conductor material on a substrate of dielectric material by chemical vapour deposition (CVD). Said method comprises the following steps: The invention further concerns nanostructures formed according to one of said methods as well as devices comprising said nanostructures.