Method and apparatus for thermal management of integrated circuits

Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and...

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Main Authors Cordes, Michael James, Cordes, Steven Alan, Ghoshal, Uttam Shyamalindu, Robinson, Errol Wayne, Speidell, James Louis
Format Patent
LanguageEnglish
Published 17.05.2005
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Abstract Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.
AbstractList Method and apparatus for thermal management of an integrated circuit. A semiconductor device includes an integrated circuit and an integrated thermoelectric cooler formed on a common substrate. A semiconductor device is fabricated by forming an integrated circuit on a front side of the substrate and forming an integrated thermoelectric cooler on a back side of the substrate. A first thermal sink of semiconductor material capable of absorbing heat from the integrated circuit is formed on the back side of the substrate. N-type thermoelectric elements are formed on contacts formed on the first thermal sink. P-type thermoelectric elements are formed on contacts formed on a second thermal sink of semiconductor material capable of dissipating heat. The p-type and n-type thermoelectric elements are bonded to the contacts on the first and second thermal sinks, respectively, by a flip-chip soldering process. Using this method, semiconductor devices including an integrated circuit and integrated modules of thermoelectric elements are formed having cooling capacities corresponding to heat dissipated from different portions of the integrated circuit. As a result, substantially uniform temperature distribution across the integrated circuit can be achieved.
Author Speidell, James Louis
Cordes, Michael James
Robinson, Errol Wayne
Cordes, Steven Alan
Ghoshal, Uttam Shyamalindu
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