Semiconductor device and process for producing the same
A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element...
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Main Authors | , , , , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
19.04.2005
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Online Access | Get full text |
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Abstract | A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics. |
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AbstractList | A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics. |
Author | Horibe, Shinichi Ishitsuka, Norio Matsuda, Yasushi Yamamoto, Hirohiko Yoshida, Yasuko Nozoe, Toshio Suzuki, Norio Fukuda, Kazushi Shimizu, Hirofumi Miura, Hideo Takamatsu, Akira Ikeda, Shuji Kobayashi, Masamichi |
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CorporateAuthor | Hitachi ULSI Systems Co., Ltd Renesas Technology Corp |
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References | (660391) 19970300 Baba et al. (5321289) 19940600 Tamaki et al. "Evaluation of Dislocation Generation in U-Groove Isolation" Solid-State Science and Technology, Mar. 1988. Park et al. (5360753) 19941100 English language translation of the abstract and claims of the document. (61-1008944) 19860100 (423722) 19901000 Ishitsuka et al. (6242323) 20010600 (2-260660) 19901000 Bose et al. (5492858) 19960200 Ishitsuka et al. (6559027) 20030500 Miyashita et al. (5434447) 19950700 Lin (5651858) 19970700 Chou et al. (5933748) 19990800 Bohr (5536675) 19960700 (8-97277) 19960400 (86-1-00527) 19870900 Ohtani et al. (5605846) 19970200 (4-303942) 19921000 Wu et al. (5658822) 19970800 Rapisarda (5504034) 19960400 (98-12742) 19980300 (63-143835) 19880600 Ishitsuka et al. (6635945) 20031000 Vasquez et al. (5455194) 19951000 Namose (4923821) 19900500 (96-02070) 19960100 Bryant et al., "Characteristics of CMOS Device Isolation for the ULSI Age" IEEE 1994. (WO 9714175) 19970400 (459397) 19910500 Pollack et al. (4580330) 19860400 (09-129720) 19970500 Dhaka (3634204) 19720100 Fahey et al. (5447884) 19950900 (660391) 19941200 |
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Title | Semiconductor device and process for producing the same |
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