Non-volatile semiconductor memory device having a memory cell which stably retains information

• Main Author: Ohtani, Jun
• Format: Patent
• Language: English
• Published: 02.11.2004

1. Field of the Invention In a non-volatile semiconductor memory device, three word line voltage circuits generating different voltages are provided. A voltage selecting circuit pre-selecting one voltage from the three different voltages is provided. In an ONO film in which lower silicon oxide film...