Thin film transistor manufacture method

This application claims the priority benefit of Taiwanese application serial no. 91111642, filed on May 31, 2002. A Thin Film Transistor (TFT) manufacture method, comprising manufacture of a gate, a gate isolation layer, a channel layer, and a source/drain. Wherein, the manufacture of the channel la...

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Bibliographic Details
Main Authors Lee, Yu-Chou, Hsu, Yi-Tsai
Format Patent
LanguageEnglish
Published 18.05.2004
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