Thin film transistor manufacture method
This application claims the priority benefit of Taiwanese application serial no. 91111642, filed on May 31, 2002. A Thin Film Transistor (TFT) manufacture method, comprising manufacture of a gate, a gate isolation layer, a channel layer, and a source/drain. Wherein, the manufacture of the channel la...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
18.05.2004
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Online Access | Get full text |
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