Trench-gate semiconductor devices having a channel-accommodating region and their methods of manufacture

• Main Authors: Peake, Steven T, Petkos, Georgios, Farr, Robert J, Rogers, Christopher M, Grover, Raymond J, Forbes, Peter J
• Format: Patent
• Language: English
• Published: 09.12.2003

This invention relates to trench-gate semiconductor devices, for example power MOSFETs (insulated-gate field-effect transistors), and to their manufacture using self-aligned techniques to fabricate the devices with compact geometries. Compact trench-gate semiconductor devices, for example a cellular...