Apparatus and method for receiving external data signal to generate internal data signal

The present invention relates to a semiconductor device for receiving an external data signal to generate an internal data signal in a high speed memory device; and, more particularly, to an apparatus and method for receiving an external signal in synchronization with rising and falling edges of a d...

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Bibliographic Details
Main Authors Yi, Seung-Hyun, Yun, Mi-Kyung
Format Patent
LanguageEnglish
Published 09.09.2003
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Summary:The present invention relates to a semiconductor device for receiving an external data signal to generate an internal data signal in a high speed memory device; and, more particularly, to an apparatus and method for receiving an external signal in synchronization with rising and falling edges of a data strobe signal to generate two internal signals in synchronization with one of rising and falling edges of a main clock. A method for receiving an external signal in synchronization with rising and falling edges of a data strobe signal to generate two internal signals in synchronization with one of both edges of a main clock in a high speed memory device, includes the steps of receiving the external signal to generate a full-swing level signal, dividing the full-swing level signal into a first signal and a second signal in synchronization with the data strobe signal, wherein the first signal is activated in synchronization with rising edges of the data strobe signal and the second signal is activated in synchronization with falling edges of the data strobe signal, aligning the first signal and the second signal with one of both edges of the data strobe signal, and aligning the aligned first and second signals with one of both edges of a main clock.