Semiconductor memory device having ferroelectric film and manufacturing method thereof

The present invention relates to a semiconductor memory device using a ferroelectric thin film, which is most suitable for a ferroelectric nonvolatile memory or high density DRAM, and to a method of manufacturing the semiconductor memory device. The present invention is a high quality semiconductor...

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Bibliographic Details
Main Authors Suenaga, Kazufumi, Ogata, Kiyoshi, Horikoshi, Kazuhiko, Tanaka, Jun, Kato, Hisayuki, Yoshizumi, Keiichi, Abe, Hisahiko
Format Patent
LanguageEnglish
Published 17.06.2003
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Summary:The present invention relates to a semiconductor memory device using a ferroelectric thin film, which is most suitable for a ferroelectric nonvolatile memory or high density DRAM, and to a method of manufacturing the semiconductor memory device. The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).