Etching process

• Main Authors: Chen, Bi-Ling, Jeng, Erik S, Liu, Hao-Chieh
• Format: Patent
• Language: English
• Published: 20.05.2003

1. Field of the Invention A method for etching a pattern within a silicon containing dielectric layer upon a substrate employed within a microelectronics fabrication, employing a plasma activated reactive gas mixture, with layer material etch rate, etch rate ratio and pattern aspect ratio controlled...