Etching process
1. Field of the Invention A method for etching a pattern within a silicon containing dielectric layer upon a substrate employed within a microelectronics fabrication, employing a plasma activated reactive gas mixture, with layer material etch rate, etch rate ratio and pattern aspect ratio controlled...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
20.05.2003
|
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!