Method for fabricating a gate dielectric layer

• Main Authors: Liu, Chuan-Hsi, Lin, Hsiu-Shan, Lin, Yu-Yin, Pan, Tung-Ming, Huang, Kuo-Tai
• Format: Patent
• Language: English
• Published: 29.04.2003

1. Field of the Invention This invention relates to a method for forming a gate dielectric layer, and, more particularly, to a method for treating a base oxide layer by using a remote plasma nitridation procedure and a thermal annealing treatment in turn to form the gate dielectric layer. The first...