Exposure apparatus and method

The present invention relates to an exposure method and apparatus therefor, an exposure system and a mask circuit pattern inspection system, which eliminate an influence of interference light generated in an extremely fine circuit pattern formed on a mask, so that an image is formed with a high reso...

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Main Authors Noguchi, Minori, Kenbo, Yukio, Oshida, Yoshitada, Shiba, Masataka, Yoshitaka, Yasuhiro, Murayama, Makoto
Format Patent
LanguageEnglish
Published 26.11.2002
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Abstract The present invention relates to an exposure method and apparatus therefor, an exposure system and a mask circuit pattern inspection system, which eliminate an influence of interference light generated in an extremely fine circuit pattern formed on a mask, so that an image is formed with a high resolving power on a substrate through a projection lens and exposed and, further, wherein the light source is an excimer laser light source. A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.
AbstractList The present invention relates to an exposure method and apparatus therefor, an exposure system and a mask circuit pattern inspection system, which eliminate an influence of interference light generated in an extremely fine circuit pattern formed on a mask, so that an image is formed with a high resolving power on a substrate through a projection lens and exposed and, further, wherein the light source is an excimer laser light source. A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.
Author Kenbo, Yukio
Oshida, Yoshitada
Murayama, Makoto
Yoshitaka, Yasuhiro
Noguchi, Minori
Shiba, Masataka
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References Jewell (4947413) 19900800
(57-191615) 19821100
Tanaka (5016149) 19910500
(2-166717) 19900600
Pampalone (4612270) 19860900
Ohtomo et al. (5638220) 19970600
(61-91662) 19860500
Horiuchi, English translation of JP 61-91662, Projection Exposure Apparatus, May 9, 1986.
(63-088453) 19880400
(63-320615) 19881200
(3-015845) 19910100
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